SS2FN6 Description
SS2FN6 Vishay General Semiconductor Surface-Mount Schottky Barrier Rectifier eSMP® Series Top view Bottom view SMF (DO-219AB) Cathode Anode ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 2.0 A (TA = 125 °C) TJ max. (DC forward current) Package 2.0 A 60 V 50 A 0.48 V 150 °C 175 °C SMF (DO-219AB) Circuit configuration Single.
SS2FN6 Key Features
- Low profile package
- Ideal for automated placement
- Low forward voltage drop, low power losses
- Low leakage current
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- Wave and reflow solderable
- AEC-Q101 qualified
- Automotive ordering code: base P/NHM3
- Material categorization: for definitions of pliance please see .vishay./doc?99912