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SUD09P10-195 - P-Channel 100V MOSFET

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • 100 % Rg and UIS Tested.
  • Compliant to RoHS Directive 2002/95/EC.

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P-Channel 100 V (D-S) MOSFET SUD09P10-195 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 100 0.195 at VGS = - 10 V 0.210 at VGS = - 4.5 V ID (A) - 8.8 - 8.5 Qg (Typ.) 11.7 TO-252 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Power Switch • DC/DC Converters S Drain Connected to Tab GDS Top View Ordering Information: SUD09P10-195-GE3 (Lead (Pb)-free and Halogen-free) G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS - 100 V VGS ± 20 Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C ID - 8.8 - 7.