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SUD40N08-16
Vishay Siliconix
N-Channel 80-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
80 0.016 @ VGS = 10 V
TO-252
ID (A)
40
FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested
D
Drain Connected to Tab GDS
Top View Ordering Information: SUD40N08-16 SUD40N08-16—E3 (Lead Free)
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25_C TC = 125_C
L = 0.
SUD40N08-16 Datasheet
