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SUD50N04-05L - N-Channel MOSFET

Key Features

  • ID (A)c 115 102 rDS(on) (W) 0.0054 @ VGS = 10 V 0.0069 @ VGS = 4.5 V D TrenchFETr Power.

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SUD50N04-05L New Product Vishay Siliconix www.DataSheet4U.com N-Channel 40-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 40 FEATURES ID (A)c 115 102 rDS(on) (W) 0.0054 @ VGS = 10 V 0.0069 @ VGS = 4.5 V D TrenchFETr Power MOSFETS D 175_C Junction Temperature APPLICATIONS D Automotive Such As: āˆ’ High-Side Switch āˆ’ Motor Drives āˆ’ Valve Drives D TO-252 G Drain Connected to Tab G D S S N-Channel MOSFET Top View Ordering Information: SUD50N04-05Lā€”E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Single Pulse Avalanche Current Single Pulse Repetitive Avalanche Energya Power Dissipation Operating Junction and Storage Temperature Range L = 0.