Datasheet4U Logo Datasheet4U.com

SUD50N06-12 - N-Channel MOSFET

Key Features

  • ID (A)c 63 rDS(on) (W) 0.012 @ VGS = 10 V D TrenchFETr Power MOSFET D 175 _C Junction Temperature.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SUD50N06-12 New Product Vishay Siliconix www.DataSheet4U.com N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 FEATURES ID (A)c 63 rDS(on) (W) 0.012 @ VGS = 10 V D TrenchFETr Power MOSFET D 175 _C Junction Temperature APPLICATIONS D Automotive and Industrial D TO-252 Drain Connected to Tab G D S G Top View Ordering Information: SUD50N06-12 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current, Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.