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SUD50P04-23 - P-Channel MOSFET

Key Features

  • TrenchFET® Power MOSFET.
  • 100 % Rg Tested.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SUD50P04-23 Vishay Siliconix P-Channel 40-V (D-S), 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 40 0.023 at VGS = 10 V 0.030 at VGS = 4.5 V ID (A)a - 20 - 20 Qg (Typ.) 20.6 nC FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • LCD TV Inverter RoHS COMPLIANT TO-252 S GDS Top View Drain Connected to Tab Ordering Information: SUD50P04-23-E3 (Lead (Pb)-free) G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS - 40 V VGS ± 16 TC = 25 °C - 20a Continuous Drain Current (TJ = 150 °C) TC = 100 °C TA = 25 °C ID - 20a - 8.2b Pulsed Drain Current TA = 100 °C - 5.