SUG90090E Description
SUG90090E Vishay Siliconix N-Channel 200 V (D-S) 175 °C MOSFET TO-247 Top View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 7.5 V Qg typ.
SUG90090E Key Features
- ThunderFET® power MOSFET
- Low RDS
- Qg figure-of-merit (FOM)
- Maximum 175 °C junction temperature
- 100 % Rg and UIS tested