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SUM110P08-11 - P-Channel MOSFET

Key Features

  • TrenchFET® Power MOSFET RoHS.

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New Product P-Channel 80-V (D-S) MOSFET SUM110P08-11 Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (Ω) - 80 0.0111 at VGS = - 10 V ID (A)b - 110 Qg (Typ) 113 nC FEATURES • TrenchFET® Power MOSFET RoHS COMPLIANT TO-263 S GDS Top View Drain Connected to Tab Ordering Information: SUM110P08-11 (Lead (Pb)-free) G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 125 °C TA = 25 °C ID TA = 125 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.