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SUM60061EL - P-Channel MOSFET

Key Features

  • TrenchFET® power MOSFET.
  • Package with low thermal resistance.
  • Maximum 175 ºC junction temperature.
  • Low RDS(on) minimizes power loss from conduction.
  • Compatible with logic-level gate driving.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription (Reference)

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www.vishay.com SUM60061EL Vishay Siliconix P-Channel 80 V (D-S) MOSFET TO-263 Top View S D G PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = -10 V RDS(on) max. (Ω) at VGS = -4.5 V Qg typ. (nC) ID (A) Configuration -80 0.0061 0.0086 145 -150 Single FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • Maximum 175 ºC junction temperature • Low RDS(on) minimizes power loss from conduction • Compatible with logic-level gate driving • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.