SUM60061EL
FEATURES
- Trench FET® power MOSFET
- Package with low thermal resistance
- Maximum 175 ºC junction temperature
- Low RDS(on) minimizes power loss from conduction
- patible with logic-level gate driving
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Battery protection
- Motor drive control
- Load switch
P-Channel MOSFET D
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
TO-263 SUM60061EL-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage Continuous drain current d (TJ = 175 °C) Pulsed drain current (100 μs) Avalanche current Single pulse avalanche energy a
Power dissipation
Operating junction and storage temperature range
TC = 25 °C TC = 70 °C
L = 0.1 m H TC = 25 °C c TC = 125 °C b
VDS VGS
IDM IAS EAS
TJ, Tstg
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-ambient Junction-to-case
Notes a. Duty cycle ≤...
