SUM70030E - N-Channel MOSFET

Vishay

Key Features

TrenchFET® power MOSFET.
Maximum 175 °C junction temperature.
Very low Qgd reduces power loss from passing through Vplateau.
100 % Rg and UIS tested.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

SUM70030E n-channel mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SUM70030E
Manufacturer	Vishay
File Size	139.90 KB
Description	N-Channel MOSFET
Datasheet	SUM70030E Datasheet

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Full PDF Text Transcription (Reference)

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www.vishay.com SUM70030E Vishay Siliconix N-Channel 100 V (D-S) MOSFET TO-263 Top View S D G PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ. (nC) ID (A) Configuration 100 0.00288 0.00348 142.4 150 d Single FEATURES • TrenchFET® power MOSFET • Maximum 175 °C junction temperature • Very low Qgd reduces power loss from passing through Vplateau • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.