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SUP70030E - N-Channel 100V MOSFET

Features

  • TrenchFET® power MOSFET.
  • Maximum 175 °C junction temperature.
  • Very low Qgd reduces power loss from passing through Vplateau.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SUP70030E
Manufacturer Vishay
File Size 154.49 KB
Description N-Channel 100V MOSFET
Datasheet download datasheet SUP70030E Datasheet
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www.vishay.com SUP70030E Vishay Siliconix N-Channel 100 V (D-S) MOSFET TO-220AB Top View S D G PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ. (nC) ID (A) Configuration 100 0.00318 0.00384 142.4 150 d Single FEATURES • TrenchFET® power MOSFET • Maximum 175 °C junction temperature • Very low Qgd reduces power loss from passing through Vplateau • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
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