SUP90N06-6m0P - N-Channel 60-V (D-S) MOSFET

Features

TrenchFET® Power MOSFET.
175 °C Junction Temperature.
100 % Rg and UIS Tested.

Vishay

Datasheet Details

Part number	SUP90N06-6m0P
Manufacturer	Vishay
File Size	103.14 KB
Description	N-Channel 60-V (D-S) MOSFET
Datasheet	SUP90N06-6m0P Datasheet
Additional preview pages of the SUP90N06-6m0P datasheet.

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Full PDF Text Transcription

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SUP90N06-6m0P Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 60 0.006 at VGS = 10 V ID (A) 90d Qg (Typ) 78.5 TO-220AB FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested APPLICATIONS • Power Supply - Secondary Synchronous Rectification • Industrial D RoHS COMPLIANT GD S Top View Ordering Information: SUP90N06-6m0P-E3 (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 70 °C ID Pulsed Drain Current IDM Avalanche Current IAS Single Avalanche Energya L = 0.

Published: Mar 9, 2015 |