Si2301BD Datasheet PDF

ABSOLUTE MAXIMUM RATINGS

(TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 sec - 20 "8 - 2.4 - 1.9 - 10 - 0.72 0.9 0.57 Steady State Unit V - 2.2 - 1.8 A - 0.6 0.7 0.45 - 55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: Document Number: 72066 S-31990—Rev. B, 13-Oct-03 RthJA Symbol Typical 120 140 Maximum 145 175 Unit _C/W 1 Si2301BDS Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-...