Vishay Si3865BDV
The Si3865BDV includes a p- and n-channel MOSFET in a single TSOP-6 package. The low on-resistance p-channel TrenchFET® is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a levelshift to drive the p-channel load-switch.| Part No. | Si3865BDV |
|---|---|
| Datasheet | Si3865BDV Download |
| Manufacturer |  Vishay |
| Description | Load Switch with Level-Shift |
| Buy | Stock & Price |
DESCRIPTION
The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The Si3865BDV operates on supply lines from 1.8 V to 8 V, and can drive loads up to 2.9 A. APPLICATION CIRCUITS Si3865BDV VIN R1 4 Q2 6 2, 3 C1 6 VOUT ON/OFF Ci R2 5 Q1 1 R2 Co LOAD GNDFEATURES
● Halogen-free According to IEC 61249-2-21 Definition● 60 m Low RDS(on) TrenchFET®: 1.8 V Rated
● 1.8 V to 8 V Input
● 1.5 V to 8 V Logic Level Control
● Low Profile, Small Footprint TSOP-6 Package
● 3000 V ESD Protection On Input Switch, VON/OFF
● Adjustable Slew-Rate
● Compliant to RoHS Directive 2002/95/EC Time (µS) 40 32 td(off) IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF tf 24 16 tr 8 td(on) 0 02468 R2 (k) Note: For R2 switching variations with other VIN/R1 combinations See Typical Characteristics Switching Variation R2 at VIN = 2.5 V, R1 = 20 k COMPONENTS R1 Pull-Up Resistor Typical 10 k to 1 M* R2 Optional Slew-Rate Control Typical 0 to 100 k* C1 Optional Slew-Rate Control Typical 1000 pF * Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
