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N-Channel 30-V (D-S) MOSFET
Si4416DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.018 @ VGS = 10 V 0.028 @ VGS = 4.5 V
ID (A)
9.0 7.3
FEATURES D TrenchFETr Power MOSFET
S1 S2 S3 G4
SO-8
8D 7D 6D 5D
Top View
Ordering Information: Si4416DY Si4416DY-T1 (with Tape and Reel)
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
VDS VGS
ID IDM IS
PD TJ, Tstg
30 "20 9.0 6.9 7.5 5.6 50 2.1 1.2 2.5 1.4 1.6 0.
Si4416DY Datasheet
