Datasheet Summary
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V) 30 rDS(on) (Ω) 0.0135 at VGS = 10 V 0.020 at VGS = 4.5 V ID (A) 10 8
Features
- -
- - TrenchFET® Power MOSFETS Fast Switching Speed Low Gate Charge 100 % UIS and Rg Tested
Pb-free Available
RoHS-
PLIANT
SCHOTTKY PRODUCT SUMMARY
VDS (V) 30 Diode Forward Voltage VSD (V) 0.53 at 3.0 A IF (A) 3.8
APPLICATIONS
- DC-DC Logic Level
- Low Voltage and Battery Powered Applications
SO-8
S S S G 1 2 3 4 Top View 8 7 6 5 D D D D Ordering Information: Si4810BDY-T1 Si4810BDY-T1-E3 (Lead (Pb)-free)
G N-Channel MOSFET S
Schottky...
