Si5411EDU Description
.vishay. Si5411EDU Vishay Siliconix P-Channel 12 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 RDS(on) () (Max.) 0.0082 at VGS = - 4.5 V 0.0094 at VGS = - 3.7 V 0.0117 at VGS = - 2.5 V 0.0206 at VGS = - 1.8 V ID (A) - 25a - 25a - 25a - 15 PowerPAK ChipFET.
Si5411EDU Key Features
- TrenchFET® Power MOSFET
- Thermally Enhanced PowerPAK® ChipFET Package
- Small Footprint Area
- Low On-Resistance
- 100 % Rg and UIS Tested
- Typical ESD Protection: 5000 V (HBM)
- Material categorization: For definitions of pliance please see .vishay./doc?99912