The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.vishay.com
Si5411EDU
Vishay Siliconix
P-Channel 12 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 12
RDS(on) () (Max.) 0.0082 at VGS = - 4.5 V 0.0094 at VGS = - 3.7 V 0.0117 at VGS = - 2.5 V 0.0206 at VGS = - 1.8 V
ID (A) - 25a - 25a - 25a
- 15
PowerPAK ChipFET Single
Qg (Typ.) 43 nC
FEATURES
• TrenchFET® Power MOSFET • Thermally Enhanced PowerPAK® ChipFET Package
- Small Footprint Area - Low On-Resistance • 100 % Rg and UIS Tested • Typical ESD Protection: 5000 V (HBM) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
1 2
D3
DD
4
8D 7D
6S 5
D G
S 1.
Si5411EDU Datasheet
