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Si5856DC - N-Channel 1.8 V (G-S) MOSFET

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFETs.
  • Ultra Low RDS(on).
  • Ultra Low VF Schottky.
  • Si5853DC Pin Compatible.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet Details

Part number Si5856DC
Manufacturer Vishay
File Size 127.08 KB
Description N-Channel 1.8 V (G-S) MOSFET
Datasheet download datasheet Si5856DC Datasheet

Full PDF Text Transcription for Si5856DC (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for Si5856DC. For precise diagrams, and layout, please refer to the original PDF.

Si5856DC Vishay Siliconix N-Channel 1.8 V (G-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.040 at VGS = 4.5 V 20 0.045 at VGS = 2.5 V 0.052 a...

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S (V) RDS(on) (Ω) 0.040 at VGS = 4.5 V 20 0.045 at VGS = 2.5 V 0.052 at VGS = 1.8 V ID (A) 5.9 5.6 5.2 SCHOTTKY PRODUCT SUMMARY VKA (V) 20 Vf (V) Diode Forward Voltage 0.375 V at 1.0 A IF (A) 1.

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