Click to expand full text
Si6953DQ
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
–20
rDS(on) (W)
0.17 @ VGS = –10 V 0.32 @ VGS = –4.5 V
ID (A)
"1.9 "1.3
S1
S2
TSSOP-8
D1 1 D
S1 2 S1 3
Si6953DQ
G1 4
Top View
8 D2 7 S2 6 S2 5 G2
G1
G2
D1 P-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
VDS VGS
ID IDM IS PD TJ, Tstg
–20 "20 "1.9 "1.5 "15 –1.25 1.0 0.
Si6953DQ Datasheet
