Si7446BDP Datasheet | Vishay

FEATURES - Halogen-free According to IEC 61249-2-21 Definition - Trench FET® Power MOSFET - 100 % Rg Tested - pliant to Ro HS Directive 2002/95/EC Power PAK® SO-8 D 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm G S N-Channel MOSFET Bottom View Ordering Information: Si7446BDP-T1-E3 (Lead (Pb)-free) Si7446BDP-T1-GE3 (Lead-(Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150°C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature)b, c TA = 25°C TA = 70°C TA = 25°C TA = 70°C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 s Steady State 30 ± 20 19 12 15 9 50 4.0 1.6 4.8 1.9 3.0 1.2 - 55 to 150 260 Unit V W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Steady State Symbol Rth JA Rth JC Typical 21 55 1.6 Maximum 26 65 2.0 Unit °C/W Notes a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (.vishay./ppg?73257). The Power PAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not remended for leadless ponents. Document Number: 72554 S09-1819-Rev. E, 14-Sep-09 .vishay. 1 Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.3 A, d I/dt = 100 A/µs VDD = 15 V, RL = 15 Ω ID ≅...