Si7860DP Description
Si7860DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) 0.008 at VGS = 10 V 0.011 at VGS = 4.5 V ID (A) 18.
Si7860DP Key Features
- TrenchFET® Power MOSFET
- PWM Optimized for High Efficiency
- New Low Thermal Resistance PLIANT PowerPAK® Package with Low 1.07 mm Profile
- 100 % Rg Tested