SiA445EDJ - P-Channel 20 V (D-S) MOSFET

Vishay

Key Features

TrenchFET® power MOSFET.
Thermally enhanced PowerPAK SC-70 package - Small footprint area - Low on-resistance.
100 % Rg tested.
Built in ESD protection with Zener diode.
Typical ESD performance: 2000 V.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

SiA445EDJ p-channel 20 v (d-s) mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SiA445EDJ
Manufacturer	Vishay
File Size	253.48 KB
Description	P-Channel 20 V (D-S) MOSFET
Datasheet	SiA445EDJ Datasheet

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www.vishay.com SiA445EDJ Vishay Siliconix P-Channel 20 V (D-S) MOSFET PowerPAK® SC-70-6L Single D D6 S5 4 2.05 mm 1 2.05 mm Top View Marking code: BQ S 7 1 2D 3D G Bottom View FEATURES • TrenchFET® power MOSFET • Thermally enhanced PowerPAK SC-70 package - Small footprint area - Low on-resistance • 100 % Rg tested • Built in ESD protection with Zener diode • Typical ESD performance: 2000 V • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -3.7 V RDS(on) max. () at VGS = -2.5 V Qg typ. (nC) ID (A) a Configuration -20 0.0165 0.0185 0.