SiA810DJ Description
New Product SiA810DJ Vishay Siliconix N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.053 at VGS = 4.5 V 0.063 at VGS = 2.5 V 0.077 at VGS = 1.8 V ID (A)a 4.5 4.5 4.5 Qg (Typ.) 4.1 nC SCHOTTKY PRODUCT SUMMARY.
SiA810DJ Key Features
- Halogen-free
- LITTLE FOOT® Plus Schottky Power MOSFET
- New Thermally Enhanced PowerPAK®
- Small Footprint Area
- Low On-Resistance
- Thin 0.75 mm profile
- Low Vf Trench Schottky Diode
SiA810DJ Applications
- Load Switch for Portable Devices (MP3/Cellular)