SiDR608EP Description
(Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration 1 4 3 S 2 S S G Bottom View 45 0.00120 0.00180 50.5 228 Single.
SiDR608EP Key Features
- TrenchFET® Gen IV power MOSFET
- 45 V Drain-source break-down voltage
- Tuned for low Qg and Qoss
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance