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SiDR608EP - N-Channel MOSFET

Features

  • TrenchFET® Gen IV power MOSFET.
  • 45 V Drain-source break-down voltage.
  • Tuned for low Qg and Qoss.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiDR608EP
Manufacturer Vishay
File Size 220.17 KB
Description N-Channel MOSFET
Datasheet download datasheet SiDR608EP Datasheet

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Full PDF Text Transcription

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www.vishay.com SiDR608EP Vishay Siliconix N-Channel 45 V (D-S) 175 °C MOSFET PowerPAK® SO-8DC D D D 6 D 7 8 5 S 6.15 mm 1 5.15 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration 1 4 3 S 2 S S G Bottom View 45 0.00120 0.00180 50.5 228 Single FEATURES • TrenchFET® Gen IV power MOSFET • 45 V Drain-source break-down voltage • Tuned for low Qg and Qoss • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
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