SiHA11N80AE Overview
SiHA11N80AE Vishay Siliconix E Series Power MOSFET D Thin-Lead TO-220 FULLPAK G G DS S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 850 VGS = 10 V 42 6 12 Single 0.391.
SiHA11N80AE Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low effective capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Integrated Zener diode ESD protection
- Material categorization: for definitions of pliance
