SiHF740LC Datasheet | Vishay

FEATURES - Ultra Low Gate Charge - Reduced Gate Drive Requirement - Enhanced 30 V VGS Rating - Reduced Ciss, Coss, Crss - Extremely High Frequency Operation - Repetitive Avalanche Rated - pliant to Ro HS Directive 2002/95/EC Available Ro HS- PLIANT DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new Low Charge MOSFETs. These device improvements bined with the proven ruggedness and reliability that are characteristic of Power MOSFETs ofter the designer a new standard in power transistors for switching applications. TO-220AB IRF740LCPb F Si HF740LC-E3 IRF740LC Si HF740LC ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc TC = 25 °C EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 9.1 m H, Rg = 25 Ω, IAS = 10 A (see fig. 12). c. ISD ≤ 10 A, d I/dt ≤ 120 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. LIMIT 400 ± 30 10 6.3 32 1.0 520 10 13 125 4.0 - 55 to + 150 300d 10 1.1 UNIT V W/°C m J A m J W V/ns °C lbf - in N-...