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SiHF8N50D - Power MOSFET

Features

  • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness - Avalanche energy rated (UIS).
  • Optimal efficiency and operation - Low cost - Simple gate drive circuitry - Low figure-of-merit (FOM): Ron x Qg - Fast switching.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription

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www.vishay.com SiHF8N50D Vishay Siliconix D Series Power MOSFET D TO-220 FULLPAK G GDS S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 30 4 7 Single 0.85 FEATURES • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness - Avalanche energy rated (UIS) • Optimal efficiency and operation - Low cost - Simple gate drive circuitry - Low figure-of-merit (FOM): Ron x Qg - Fast switching • Material categorization: for definitions of compliance please see www.vishay.
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