SiHF9Z20 Datasheet | Vishay

FEATURES - P-channel versatility - pact plastic package - Fast switching - Low drive current - Ease of paralleling - Excellent temperature stability - Material categorization: for definitions of pliance please see .vishay./doc?99912 DESCRIPTION The power MOSFET technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the power MOSFET design achieve very low on-state resistance bined with high transconductance and extreme device ruggedness. The P-channel power MOSFETs are designed for application which require the convenience of reverse polarity operation. They retain all of the features of the more mon N-channel power MOSFETs such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability. P-channel power MOSFETs are intended for use in power stages where plementary symmetry with N-channel devices offers circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers. ORDERING INFORMATION Package Lead (Pb)-free TO-220AB IRF9Z20Pb F ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a Linear Derating Factor VGS at - 10 V TC = 25 °C TC = 100 °C Inductive Current, Clamped Unclamped Inductive Current (Avalanche current) Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Remendations (Peak temperature) c L = 100 μH TC = 25 °C for 10 s ILM IL PD TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14). b. VDD = - 25 V, starting TJ = 25 °C, L =100 μH, Rg = 25  c. 0.063" (1.6 mm) from case. LIMIT -50 ± 20 -9.7 -6.1 -39 0.32 -39 -2.2 40 -55 to +150...