SiHFIB5N65A Overview
IRFIB5N65A, SiHFIB5N65A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 48 12 19 Single 0.93 TO-220 FULLPAK D G GDS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free.
SiHFIB5N65A Key Features
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- pliant to RoHS directive 2002/95/EC