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SiHFP360LC Datasheet Power MOSFET

Manufacturer: Vishay

Overview: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 400 VGS = 10 V 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single 0.

General Description

This new series of low charge Power MOSFETs achieve significantly lower gate charge over convertional MOSFETs.

Utilizing advanced MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings.

These device improvements combined with the proven ruggedness and reliability of MOSFETs offer the designer a new standard in power transistors for switching applications.

Key Features

  • Ultra Low Gate Charge.
  • Reduced Gate Drive Requirement.
  • Enhanced 30 V VGS Rating.
  • Reduced Ciss, Coss, Crss.
  • Isolated Central Mounting Hole.
  • Dynamic dV/dt Rated.
  • Repetitive Avalanche Rated.
  • Compliant to RoHS Directive 2002/95/EC Available RoHS.

SiHFP360LC Distributor