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www.vishay.com
IRFR010, SiHFR010
Vishay Siliconix
Power MOSFET
DPAK (TO-252) D
S G
D
G S
N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
50
VGS = 10 V 10
0.20
2.6
4.8
Single
FEATURES • Low drive current
• Surface-mount
• Fast switching
• Ease of paralleling
• Excellent temperature stability
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
The power MOSFET technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dV/dt capability.