Datasheet Details
| Part number | SiHFSL11N50A |
|---|---|
| Manufacturer | Vishay |
| File Size | 305.46 KB |
| Description | Power MOSFET |
| Datasheet | SiHFSL11N50A-Vishay.pdf |
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Overview: IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 500 VGS = 10 V 51 Qgs (nC) 12 Qgd (nC) 23 Configuration Single I2PAK (TO-262) D 0.
| Part number | SiHFSL11N50A |
|---|---|
| Manufacturer | Vishay |
| File Size | 305.46 KB |
| Description | Power MOSFET |
| Datasheet | SiHFSL11N50A-Vishay.pdf |
|
|
|
Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
I2PAK (TO-262) IRFSL11N50APbF SiHFSL11N50A-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s TJ, Tstg Notes a.
Repetitive rating;
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