Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on resistance per silicon area.
Key Features
Advanced process technology.
Surface-mount (IRFZ14S, SiHFZ14S).
Low profile through-hole (SiHFZ14L).
175 °C operating temperature
Available.
Fast switching
Available.
Material categorization: for definitions of
compliance please see www. vishay. com/doc?99912
Note.
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations a.
Full PDF Text Transcription for SiHFZ14S (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SiHFZ14S. For precise diagrams, and layout, please refer to the original PDF.
www.vishay.com IRFZ14S, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET D I2PAK (TO-262) D2PAK (TO-263) S GD D G S G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (...
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263) S GD D G S G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 11 3.1 5.8 Single 0.20 FEATURES • Advanced process technology • Surface-mount (IRFZ14S, SiHFZ14S) • Low profile through-hole (SiHFZ14L) • 175 °C operating temperature Available • Fast switching Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.