SiHG052N60EF - Power MOSFET

Vishay

Key Features

4th generation E series technology.
Low figure-of-merit (FOM) Ron x Qg.
Low effective capacitance (Co(er)).
Reduced switching and conduction losses.
Avalanche energy rated (UIS).
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

SiHG052N60EF power mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SiHG052N60EF
Manufacturer	Vishay
File Size	470.18 KB
Description	Power MOSFET
Datasheet	SiHG052N60EF Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
SIHG17N60D	D Series Power MOSFET	Vishay Siliconix
SIHG20N50C	Power MOSFET	Vishay Siliconix
SIHG20N50C	N-Channel MOSFET	INCHANGE
SIHG22N60E	Power MOSFET	Vishay Siliconix
SIHG22N60S-E3	(SIHG22N60S-E3 / SIHG47N60S-E3) Power MOSFET	Vishay Siliconix

Other Datasheets by Vishay

Part Number	Description
SiHG050N60E	Power MOSFET
SiHG026N65E	Power MOSFET
SiHG039N60E	Power MOSFET
SiHG085N60EF	Power MOSFET
SiHG105N60EF	Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

www.vishay.com SiHG052N60EF Vishay Siliconix EF Series Power MOSFET With Fast Body Diode D TO-247AC S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 101 24 22 Single 0.045 FEATURES • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.