SiHG186N60EF Description
SiHG186N60EF Vishay Siliconix EF Series Power MOSFET With Fast Body Diode D TO-247AC S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (Ω) at 25 °C 650 VGS = 10 V Qg max. (nC) 32 Qgs (nC) 7 Qgd (nC) 7 Configuration Single 0.168.
SiHG186N60EF Key Features
- 4th generation E series technology
- Low figure-of-merit (FOM) Ron x Qg
- Low effective capacitance (Co(er))
- Reduced switching and conduction losses
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance please see .vishay./doc?99912