SiHG21N80AEF Description
SiHG21N80AEF Vishay Siliconix EF Series Power MOSFET With Fast Body Diode D TO-247AC S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 850 VGS = 10 V 71 10 21 Single 0.220.
SiHG21N80AEF Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low effective capacitance (Co(er))
- Reduced switching and conduction losses
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance