The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.vishay.com
SiHG47N60AEF
Vishay Siliconix
EF Series Power MOSFET With Fast Body Diode
D
TO-247AC
S
D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) typ. (Ω) at 25 °C
650 VGS = 10 V
Qg max. (nC)
189
Qgs (nC)
26
Qgd (nC)
55
Configuration
Single
0.061
FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses
• Ultra low gate charge (Qg) • Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance please see www.vishay.