SiHG47N60AEF Description
SiHG47N60AEF Vishay Siliconix EF Series Power MOSFET With Fast Body Diode D TO-247AC S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (Ω) at 25 °C 650 VGS = 10 V Qg max. (nC) 189 Qgs (nC) 26 Qgd (nC) 55 Configuration Single 0.061.
SiHG47N60AEF Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance please see .vishay./doc?99912