Full PDF Text Transcription for SiHH105N60EF (Reference)
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www.vishay.com SiHH105N60EF Vishay Siliconix EF Series Power MOSFET With Fast Body Diode PowerPAK® 8 x 8 4 1 2 3 3 Pin 4: drain Pin 1: gate Pin 2: Kelvin connection Pin 3...
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x 8 4 1 2 3 3 Pin 4: drain Pin 1: gate Pin 2: Kelvin connection Pin 3: source N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. (Ω) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 50 16 8 Single 0.091 FEATURES • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Kelvin connection for reduced gate noise • Material categorization: for definitions of compliance please see www.vishay.
SiHH105N60EF Datasheet
