SiHH11N60E Description
SiHH11N60E Vishay Siliconix E Series Power MOSFET PowerPAK® 8 x 8 4 1 2 3 3 Pin 4: source N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 62 7 13 Single 0.295.
SiHH11N60E Key Features
- pletely lead (Pb)-free device
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Kelvin connection for reduced gate noise
- Material categorization: for definitions of pliance