Full PDF Text Transcription for SiHH20N50E (Reference)
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www.vishay.com SiHH20N50E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration...
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RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 70 9 15 Single 0.147 PowerPAK® 8 x 8 Pin 4 4 1 2 3 3 Pin 1 Pin 2 Pin 3 N-Channel MOSFET FEATURES • Completely lead (Pb)-free device • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Kelvin connection for reduced gate noise • Material categorization: for definitions of compliance please see www.vishay.
SiHH20N50E Datasheet
