Full PDF Text Transcription for SiHH24N65EF (Reference)
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www.vishay.com SiHH24N65EF Vishay Siliconix E Series Power MOSFET with Fast Body Diode PowerPAK® 8 x 8 4 1 2 3 3 Pin 4: drain Pin 1: gate Pin 2: Kelvin connection Pin 3: ...
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8 4 1 2 3 3 Pin 4: drain Pin 1: gate Pin 2: Kelvin connection Pin 3: source N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. (Ω) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 117 18 33 Single 0.137 FEATURES • Completely lead (Pb)-free device • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Kelvin connection for reduced noise • Material categorization: for definitions of compliance please see www.vishay.
SiHH24N65EF Datasheet
