SiHJ8N60E
FEATURES
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Switch mode power supplies (SMPS)
- Flyback converter
- Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
- Consumer
- Wall adaptors
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Power PAK SO-8L Si HJ8N60E-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current a
VGS at 10 V
TC = 25 °C TC = 100 °C
ID IDM
Linear Derating Factor
Single Pulse Avalanche Energy b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TJ, Tstg
Drain-Source Voltage Slope Reverse Diode d V/dt d
TJ = 125 °C d...
