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www.vishay.com SiHJ8N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. at 25 °C () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration ...
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DS(on) typ. at 25 °C () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 44 5 10 Single 0.45 PowerPAK® SO-8L Single D G S N-Channel MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.
SiHJ8N60E Datasheet
