SiJ4108DP Description
SiJ4108DP Vishay Siliconix N-Channel 100 V (D-S) MOSFET PowerPAK® SO-8L Single 6.15 mm 1 5.13 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ.
SiJ4108DP Key Features
- TrenchFET® Gen IV power MOSFET
- Very low Qg and Qoss reduce power loss and improve efficiency
- Flexible leads provide resilience to mechanical stress
- 100 % Rg and UIS tested
- Qgd/Qgs ratio < 1 optimizes switching characteristics
- Material categorization: for definitions of pliance