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SiS903DN - Dual P-Channel MOSFET

Key Features

  • TrenchFET® Gen III p-channel power MOSFET.
  • 62 % smaller package footprint than SO-8.
  • Thermally enhanced PowerPAK® package.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiS903DN
Manufacturer Vishay
File Size 244.22 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet SiS903DN Datasheet

Full PDF Text Transcription for SiS903DN (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SiS903DN. For precise diagrams, and layout, please refer to the original PDF.

www.vishay.com SiS903DN Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET PowerPAK® 1212-8 Dual D2 D2 6 D1 7 D1 8 5 3.3 mm 1 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. (...

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2 6 D1 7 D1 8 5 3.3 mm 1 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V Qg typ. (nC) ID (A) f, g Configuration 1 4 G2 3 S2 2 G1 S1 -20 0.0201 0.0261 0.0400 15.9 6 Dual FEATURES • TrenchFET® Gen III p-channel power MOSFET • 62 % smaller package footprint than SO-8 • Thermally enhanced PowerPAK® package • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.