SiS903DN Overview
() at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V Qg typ.
SiS903DN Key Features
- TrenchFET® Gen III p-channel power MOSFET
- 62 % smaller package footprint than SO-8
- Thermally enhanced PowerPAK® package
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance please see .vishay./doc?99912