SiSS27ADN Description
() at VGS = -10 V RDS(on) max. () at VGS = -6 V RDS(on) max. () at VGS = -4.5 V Qg typ.
SiSS27ADN Key Features
- TrenchFET® Gen III p-channel power MOSFET
- Low thermal resistance PowerPAK® package
- 100 % Rg and UIS tested
- Material categorization
SiSS27ADN Applications
- Battery management in mobile devices