SiSS4402DN Description
(Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration 1 4 3 S 2 S S G Bottom View 40 0.0022 0.0032 21.5 128 Single.
SiSS4402DN Key Features
- TrenchFET® Gen IV power MOSFET
- Very low Qg and Qoss reduce power loss and improve efficiency
- Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance