TCET1600G Description
The TCET1600, TCET1600G consists of a phototransistor optically coupled to 2 gallium arsenide infrared-emitting diodes in a single (4 pin) package.
TCET1600G Key Features
- Isolation materials according to UL 94 V-0
- Pollution degree 2 (DIN / VDE 0110 / resp
- Climatic classification 55/100/21 (IEC 60068
- Special construction: therefore, extra low
- Low temperature coefficient of CTR
- Rated impulse voltage (transient overvoltage) VIOTM = 10 kVpeak
- Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kVpeak
- Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS
- Rated recurring peak voltage (repetitive) VIORM = 890 Vpeak
- Thickness though insulation ≥ 0.75 mm