Description
The TCET2100, TCET4100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode, available in 8 pin (dual channel) and 16 pin (quad
ORDERING INFORMATION
T
C
E
T
#
1
PART NUMBER
AGENCY CERTIFIED / PACKAGE UL, cUL, VDE DIP-8, dual channel DIP-16, quad chan
Features
- Extra low coupling capacity - typical 0.2 pF.
- High common mode rejection.
- Low temperature coefficient of CTR.
- Rated impulse voltage (transient overvoltage)
VIOTM = 10 kV peak.
- Creepage current resistance according to
VDE 0303 / IEC 60112 comparative tracking
C
E
index: CTI ≥ 175
A1
C.
- Thickness through insulation ≥ 0.4 mm.
- Material categorization: for definitions of compliance
please see www. vishay. com/doc?99912
LINK.
TCET2100 Datasheet
