Datasheet4U Logo Datasheet4U.com

TSDF12830YS - two AGC Amplifiers

General Description

The Dual-MOSMIC® TSDF12830YS, assembled in the well-known SOT-363 plastic package, is a combination of two different MOSMIC® amplifiers with common Source and common Gate 2 leads and an integrated switch.

Key Features

  • Two differently optimized amplifiers in a single package. One of them has a fully internal self-biasing network on chip and the other has a partly integrated bias for easy Gate 1 switch-off with PNP switching transistors inside PLL -IC.
  • Internal switch for saving lines on PCB layout as well as external components.
  • Integrated gate protection diodes.
  • Low noise figure, high gain.
  • Typical forward transadmittance of 31 mS resp. 28 mS.
  • Superior cr.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TSDF1205 Silicon NPN Planar RF Transistor Vishay Telefunken
TSDF1205R Silicon NPN Planar RF Transistor Vishay Telefunken
TSDF1205RW Silicon NPN Planar RF Transistor Vishay Telefunken
TSDF1205W Silicon NPN Planar RF Transistor Vishay Telefunken
TSDF1220 Silicon NPN Planar RF Transistor Vishay Telefunken

Other Datasheets by Vishay

Part Number Description
TSDP34138 IR Receiver
TSDP34156 IR Receiver
TSDP34338 IR Receiver
TSDP34356 IR Receiver

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
VISHAY TSDF12830YS Vishay Semiconductors Dual - MOSMIC®- two AGC Amplifiers for TV-Tuner Prestage with Integrated Band Switch for One-Line Switching Comments MOSMIC - MOS Monolithic Integrated Circuit VY 6 5 4 Description The Dual-MOSMIC® TSDF12830YS, assembled in the well-known SOT-363 plastic package, is a combination of two different MOSMIC® amplifiers with common Source and common Gate 2 leads and an integrated switch. One of the MOSMIC stages is optimized for use in VHF applications, especially regarding cross modulation performance and noise figure at lower VHF frequencies, whereas the other stage is optimized for use in UHF applications regarding gain and noise figure performance at higher frequencies of UHF range.