TSFF6410 - High Speed Infrared Emitting Diode

Description

TSFF6410 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

Features

Package type: leaded.
Package form: T-1¾.
Dimensions (in mm): Ø 5.
Peak wavelength: λp = 870 nm.
High reliability.
High radiant power.
High radiant intensity.
Angle of half intensity: ϕ = ± 22°.
Low forward voltage.
Suitable for high pulse current operation.
High modulation bandwidth: fc = 24 MHz.
Good spectral matching to Si photodetectors.
Material categorization: for definitio.

Vishay

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Datasheet Details

Part number	TSFF6410
Manufacturer	Vishay
File Size	107.84 KB
Description	High Speed Infrared Emitting Diode
Datasheet	TSFF6410 Datasheet
Additional preview pages of the TSFF6410 datasheet.

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Full PDF Text Transcription

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End of Life - Last Available Purchase Date: 11-October-2023 (PTN-OPT-1278-2023-REV-1) www.vishay.com TSFF6410 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero DESCRIPTION TSFF6410 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

Published: Dec 24, 2023 |